Abstract: The laser-induced etching (LIE) has been proposed as an alternative technique. This LIE process is used to create GaP nanostructure. The studies of surface morphology of the reconstructed surface etched by laser-induced etching and the etching rate parameters have been investigated. The surface structure, pits diameter and distribution have been illustrated by using a scanning electron microscopy (SEM). Study of the effect of laser parameters on the surface morphology of the etched area such as different laser power densities and irradiation times has been made. Different structures have been produced for porous GaP. It is found that the pore walls become extremely thin and shorter at 12 W/cm2 power density and 15 min irradiation time...